| PART |
Description |
Maker |
| MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04 |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04 |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04 |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A_04 MGFC45V3642A MGFC45V3642A04 |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A |
5.9-6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04 |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5867 |
MGFC45V5867
5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3642A C453642A |
3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET 3.6 - 4.2GHz波段32W内部匹配砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MF1302T-1R8 MF1501T-1R5 MF1304T-6R8 MF1303T-100 MF |
Axial Molded Choke
0.5-2.5 GHz Ultralinear Mixer w/LO Buffer
8.5 - 11 GHz 6-bit Phase Shifter
Low Noise Amp, SB
Gain Block
X-band Discrete Power pHEMT
Ku-band Discrete Power pHEMT
18mm HFET
24mm HFET
Cell-Band CDMA PA Module; 1-Bit
Cell-Band PA Module; 1-Bit
|
ECM Electronics Limited.
|
| LD7111 LD7111SERIES |
DBS-Band, 1.7KW Klystrons for Communications
17 GHz BAND, 1.7 kW, HIGH EFICIENCY, HIGH POWER GAIN
17 GHz BAND / 1.7 kW / HIGH EFICIENCY / HIGH POWER GAIN
|
NEC[NEC]
|
